125,00 din
sifra: A729
Opis
150V,1.9A,2.5W,N-MOS,SO8
280mR, 10ns, 10nC
Napomena
Manufacturer Infineon (IRF) Type of transistor N-MOSFET Technology HEXFET Polarisation unipolar Drain-source voltage 150V Drain current 1.9A Power dissipation 2.5W Case SO8 Gate-source voltage 30V On-state resistance 0.28R Mounting SMD Gate charge 10nC